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Global foundries' 7nm process was similar to Intel's 10nm, however Intel heavily revised their 10nm process to be approximately 1.3x less dense.



You seem to know more about recent news better than me.

I heard that Intel's 10 nm delay was mainly the result of its overambitious engineering and beliefs that they could do 10 nm via existing DUV without the troubles of moving to EUV, but the yield proved to be extremely low and basically a disaster.

Is it true? What is their reenginnered solution in addition to making it 1.3x less dense?


I assume both the parents are referring to TSMC, global foundries stepped out of 7nm to concentrate on existing processes




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